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| Package | Stock Code |
| Description | Qty Discount | Price | Priced Per | Sold In | Qty | |
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FET TRANSISTOR N-CH 30mA TO92
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THROUGH HOLE / PCB MOUNT N CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR, 0.03A,
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TO-92
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1
to
10
|
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11
to
20
|
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21
to
40
|
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| Unit | Each |
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MOSFET N-CH TO220 240V 1.4A 6E0
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THROUGH HOLE / PCB MOUNT POWER FIELD-EFFECT TRANSISTOR, 1.4A I(D), 240V, 6 OHM, 20W,
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1-ELEMENT, N-CHANNEL
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1
to
10
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11
to
20
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21
to
40
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| Unit | Each |
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BS170 TO92
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ON SEMI / FAIRCHILD
|
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1.00
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FET N-C TO92 60V 0A15
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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
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TO-92
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1
to
50
|
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51
to
100
|
|
101
to
500
|
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| Unit | Each |
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IRLU024NPBF
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INFINEON / IR
|
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1.00
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MOSFET N-C I-PAK 55V 17A 0E065
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N-CHANNEL HEXFET FIELD EFFECT TRANSISTOR 55V 17A 0E065, WITH LOGIC LEVEL GATE
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DRIVE.
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1
to
10
|
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11
to
20
|
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21
to
40
|
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| Unit | Each |
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IRF7413ZPBF
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INFINEON / IR
|
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1.00
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MOSFET N-C SMD SOIC08 30V 13A 0E01
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HEXFET N-CHANNEL FIELD EFFECT TRANSISTOR 30V 13A 0E01
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| Unit | Each |
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IRFZ44NPBF
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INFINEON / IR
|
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1.00
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MOSFET N-C TO220AB 55V 49A 0E017
|
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N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, TO-220AB VDS=55V, ID=49A, RDS=0E0175
|
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IP=160A
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1
to
25
|
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26
to
50
|
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51
to
100
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| Unit | Each |
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FDV301N *DBK*
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ON SEMI / FAIRCHILD
|
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1.00
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FET N-C SOT-23 25V 0A22 4E
|
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SMD N-CHANNEL LOGIC LEVEL FIELD EFFECT TRANSISTOR 25V 0A22 4 OHMSS. ZENER PROTECTED,
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LOGIC LEVEL GATE DRIVE, MRK=301
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1
to
50
|
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51
to
100
|
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101
to
500
|
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| Unit | Each |
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BSN20-7 *DBK*
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DIODES / ZETEX
|
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1.00
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FET N-C SMD SOT23 50V 0A173
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, SMD PACKAGE SOT-23
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1
to
10
|
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11
to
20
|
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21
to
40
|
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|
| Unit | Each |
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IRLML5203TR *DBK*
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INFINEON / IR
|
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1.00
|
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MOSFET FET P-C SOT-23 30V 3A 0E165
|
|
HEXFET / MOSFET SMD LOGIC LEVEL FAST SWITCHING FIELD EFFECT TRANSISTOR WITH ULTRA
|
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LOW ON RESISTANCE 0E165
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1
to
10
|
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11
to
20
|
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21
to
40
|
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| Unit | Each |
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FET P-C TSMT6 20V 1A5
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P-CHANNEL FIELD EFFECT TRANSISTOR WITH
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DIODE
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1
to
50
|
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51
to
100
|
|
101
to
500
|
|
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| Unit | Each |
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FET N-C SMD SOT-23 35V 0A05
|
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SMD N-CHANNEL FIELD EFFECT TRANSISTOR 35V 50MA
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1
to
50
|
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51
to
100
|
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101
to
500
|
|
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| Unit | Each |
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FET P-C SMD SOT-23 20V 1A6
|
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P-CHANNEL SMD SPECIFIC POWERTRENCH FIELD EFFECT TRANSISTOR
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1
to
50
|
|
51
to
100
|
|
101
to
500
|
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| Unit | Each |
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BSS84 *A*
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NXP / NEXPERIA
|
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1000.00
|
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FET P-C SMD SOT23 50V 0A13
|
|
SURFACE MOUNT P CHANNEL FIELD EFFECT TRANSISTOR
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SOT-23
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1000
to
1001
|
|
2001
to
1002
|
|
2002
to
1003
|
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| Unit | Each |
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FET N-CHANNEL TO92 100V 0A9 0E50
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / 100V / 0E5 / 0.9A to-92
|
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1
to
25
|
|
26
to
50
|
|
51
to
100
|
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| Unit | Each |
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IRLML6402TRPBF *DBK*
|
|
INFINEON / IR
|
|
1.00
|
|
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MOSFET P-C SMD SOT23 20V 3A7 0E06
|
|
HEXFET / MOSFET P-CHANNEL FIELD EFFECT TRANSISTOR 20V 3A7 0E065
|
|
SOT-23
|
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|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
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|
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| Unit | Each |
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NTD3055L104T4G
|
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ON SEMI
|
|
1.00
|
|
|
|
|
|
|
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MOSFET N-C D-PAK/TO252 60V 12A 0E104
|
|
SMD LOGIC LEVELDPAK, N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET VDS=60V ID=12A,
|
|
RDS=104mOHMS
|
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1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
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|
|
| Unit | Each |
|
|
|
|
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|
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MOSFET N-C DIL04 60V 1A7 0E20
|
|
N-CHANNEL HEXFET FAST SWITCHING FIELD EFFECT TRANSISTOR
|
|
|
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|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
|
FET N-C SO-8 60V 8A5 0E02
|
|
N CHANNEL SURFACE MOUNT FIELD EFFECT TRANSISTOR, 60V, 8.5A, 0E022, SOIC08 PACKAGE -
|
|
SINGLE FET
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
IRFL9014TRPBF
|
|
VISHAY
|
|
1.00
|
|
|
|
|
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|
|
MOSFET P-CHANNEL SMD SOT223 60V 1A8 0E50
|
|
P CHANNEL FIELD EFFECT TRANSISTOR / 60V / 1.8A / 0E50.
|
|
SOT-223
|
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|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SOT-23 25V 0A01
|
|
JFET N-CHANNEL FIELD EFFECT TRANSISTOR, SOT-23 PACKAGE AUDIO
|
|
AMPLIFIER
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
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| Unit | Each |
|
|
|
|
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|
|
BF998-E-6327
|
|
INFINEON
|
|
1.00
|
|
|
|
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|
|
FET N-C SOT143 12V 0A03
|
|
SMD N-CHANNEL DUAL GATE FIELD EFFECT
|
|
TRANSISTOR
|
|
|
|
|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
|
2N7002LT1G *DBK*
|
|
ON SEMI
|
|
10.00
|
|
|
|
|
|
|
|
SMD N-C FET SOT-23 60V 0A115 3-PIN
|
|
SURFACE MOUNT TRENCHMOS N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V 115mA
|
|
7.5OHMS, MK=702. DEBULKED AND SOLD IN PIECES.
|
|
|
|
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|
10
to
10
|
|
20
to
100
|
|
110
to
1000
|
|
|
|
|
|
|
| Unit | Each |
|
|
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STP5NK80ZFP
|
|
ST MICRO
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-C TO220 800V 4A3 2E4
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, GDS, 800V 4.3A 1E9 VDS=800V, ID=4.3A,
|
|
RDS=2E4 WITH ZENER PROTECTED GATE
|
|
|
|
|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
MOSFET P-C SMD D-PAK 60V 12A 0E155
|
|
SMD P-CHANNEL MOSFET FIELD EFFECT TRANSISTOR VDS=60V, ID=12A,
|
|
RDS=0E155
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
SI3457CDV-T1-E3
|
|
VISHAY
|
|
1.00
|
|
|
|
|
|
|
|
FET P-C TSOP6 30V 5A 0E074
|
|
SINGLE, P CHANNEL SURFACE MOUNT FIELD EFFECT TRANSISTOR / MOSFET 30V 5A
|
|
0E074
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
|
ZVN4210GTA
|
|
DIODES INC
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-CHANNEL SMD SOT223 100V 0A8 1E5
|
|
FIELD EFFECT TRANSISTOR, SMD, N-CHANNEL, SOT-223, ENHANCEMENT MODE VDS=100V,
|
|
ID=0.8A, RDS=1E5
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
SI1032R-T1-E3
|
|
VISHAY
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C SC-75 20V 0A2 5E0 SOT23
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR, SMD SC75, 20V 0A2
|
|
5E0
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SOT143 12V 0A03
|
|
SMD N-CHANNEL DUAL GATE FIELD EFFECT TRANSISTOR
|
|
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFR3910PBF
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-C SMD D-PAK/TO252 100V 16A 0E115
|
|
SURFACE MOUNT DPAK, N CHANNEL FIELD EFFECT TRANSISTOR, 100V, 16A,
|
|
0E115
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SO-8 60V 3A3 0E1
|
|
SMD FAST SWITCHING DUAL N-CHANNEL MOSFET - LOW ON RESISTANCE 0E1
|
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|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRLL110-TR
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-CHANNEL SMD SOT223 100V 1A5 0E54
|
|
SMD HEXFET POWER MOSFET WITH LOGIC LEVEL GATE DRIVE AND CLAMPING DIODE 100V 1A5 LOW
|
|
RDS 0E54. SOT-223
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF9Z24NPBF
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET P-C TO220 55V 12A
|
|
FIELD EFFECT TRANSISTOR, GDS, VDS=55V, ID=12A,
|
|
RDS=0E175
|
|
|
|
|
|
1
to
49
|
|
50
to
100
|
|
101
to
200
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFL014NPBF
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-CHANNEL SMD SOT223 55V 1A9 0E16
|
|
FIELD EFFECT TRANSISTOR / MOSFET HEXFET WITH LOGIC DRIVE GATE SOT-223, VDS=55V,
|
|
ID=1.9A, RDS=0E16
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF9540NPBF
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET P-C TO220 100V 23A 0E120
|
|
P-CHANNEL FIELD EFFECT TRANSISTOR TO-220 VDS=100V, ID=23A, RDS=0E12, IP=76A,
|
|
PT=140W
|
|
|
|
|
|
1
to
44
|
|
45
to
89
|
|
90
to
224
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRLML2803TRPBF *DBK*
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C SOT-23 30V 1A2 0E25
|
|
SMD N-CHANNEL HEXFET POWER FIELD EFFECT TRANSISTOR 30V 1.2A 0E25, WITH LOGIC GATE
|
|
DRIVE
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFPE40
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TO247 800V 5A4 2E0
|
|
N CHANNEL MOSFET FIELD EFFECT TRANSISTOR / TO247 VDS=800V, ID=5.4A,
|
|
RDS=2E
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF9Z34N
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
FET P-C TO220 55V 19A 0E10
|
|
P-CHANNEL FIELD EFFECT TRANSISTOR VDS=55V, ID=19A,
|
|
RDS=0E1
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET P-C SOT-23 45V 0A09 BS250F
|
|
P-CHANNEL FIELD EFFECT TRANSISTOR
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFD120
|
|
INFINEON / IR
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET N-C 100V 1A3 1E5 DIP4
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THROUGH HOLE / PCB MOUNT FIELD EFFECT TRANSISTOR, N-CHANNEL, DIP
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PACKAGE
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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IRF1407PBF
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INFINEON / IR
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1.00
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MOSFET N-C TO220 75V 130A 0E007
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N CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, VDS=75V, ID=130A, RDS=0E0078.
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TO-220
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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IRFI9Z34GPBF
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VISHAY SILICONIX
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1.00
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FET P-C TO220 60V 12A 0E14
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FIELD EFFECT TRANSISTOR, P CHANNEL, TO220 PACKAGE ISOLATED, VDSS=60V, ID=12A,
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RDS=0E14,
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1
to
10
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11
to
20
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21
to
40
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| Unit | Each |
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IRFZ44VPBF
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INFINEON / IR
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1.00
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FET N-C TO220AB 60V 55A
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N CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, TO-220AB, 55A,
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60V
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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IRLML2502TRPBF *DBK*
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INFINEON / IR
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1.00
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MOSFET N-C SOT-23 20V 4A 0E045
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N-CHANNEL HEXFET POWER FIELD EFFECT TRANSISTOR, SMD, WITH LOGIC LEVEL GATE DRIVE
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VDSS=20V, ID=4A, RDS=0E045, MRK=G,
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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FET N-C TO220 400V 5A5 1E0
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FIELD EFFECT TRANSISTOR, GDS, TO220, 400V 5.5A 1 OHM, AVALANCHE
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TESTED,
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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BSS138 *DBK*
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ON SEMI / FAIRCHILD
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1.00
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FET N-C SOT-23 50V 0A22
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SMD N-CHANNEL ENHANCEMENT MODE LOGIC LEVEL FIELD EFFECT TRANSISTOR, 50V, 0.22A,
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Rds=3E5, MRK=SS,
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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IRF4905PBF
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INFINEON / IR
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1.00
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FET P-C TO220 55V 74A 0E02
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P-CHANNEL FIELD EFFECT TRANSISTOR VDS=55V, ID=74A, RDS=0E020, IP=260A,
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PT=200W
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1
to
49
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50
to
100
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101
to
200
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| Unit | Each |
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IRF3205PBF
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INFINEON / IR
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1.00
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MOSFET N-C TO220 55V 110A
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N-CHANNEL FIELD EFFECT MOSFET TRANSISTOR VDS=55V, ID=110A, RDS=0E008
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IP=390A
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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FET N-C TO220FL 500V 2A5 2E1
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N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET VDS=500V, ID=2.5A,
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RDS=2E1
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1
to
50
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51
to
100
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101
to
500
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| Unit | Each |
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IRF640NPBF
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INFINEON / IR
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1.00
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MOSFET N-C TO220 200V 18A 0E18
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N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET VDS=200V, ID=18A, RDS=0E18,
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TO-220AB
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1
to
25
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26
to
50
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51
to
100
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| Unit | Each |
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IRF1404PBF
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INFINEON / IR
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1.00
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MOSFET N-C TO220 40V 202A 0E004
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N-CHANNEL HEXFET FIELD EFFECT TRANSISTOR / MOSFET, VDS=40V, ID=202A, RDS=0E004
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IP=808A
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1
to
49
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50
to
100
|
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101
to
200
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| Unit | Each |
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