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| Package | Stock Code |
| Description | Qty Discount | Price | Priced Per | Sold In | Qty | |
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BS170 TO92
|
|
FAIRCHILD
|
|
1.00
|
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|
|
FET N-C TO92 60V 0A15
|
|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
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|
|
1
to
100
|
|
101
to
500
|
|
501
to
1000
|
|
|
|
|
|
|
| Unit | Each |
|
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FET N-C TO92 60V 0A2 5E0
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR. TO-92
|
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1
to
100
|
|
101
to
500
|
|
501
to
1000
|
|
|
|
|
|
|
| Unit | Each |
|
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|
FET N-C TO220AB 55V 49A 0E017
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, TO-220AB VDS=55V, ID=49A, RDS=0E0175
|
|
IP=160A
|
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|
|
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1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
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FDMA1028NZ
|
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FAIRCHILD
|
|
1.00
|
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|
FET DUAL N+N MLP6 20V 3A7
|
|
DUAL N-CHANNEL POWERTRENCH MOSFET, SND, MLP-6, 20V 3.7A 86mA, ZENER
|
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PROTECTED,
|
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1
to
25
|
|
26
to
50
|
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51
to
100
|
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| Unit | Each |
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|
FET P-C SMD SOT23 20V
|
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P-CHANNEL MOSFET, 1 A, 20 V, 3-Pin SOT-23
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1
to
10
|
|
11
to
20
|
|
21
to
40
|
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|
|
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|
|
| Unit | Each |
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|
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IRLML5203TR *DBK*
|
|
IR / INFINEON
|
|
1.00
|
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|
|
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|
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MOSFET FET P-C SOT-23 30V 3A 0E165
|
|
HEXFET / MOSFET SMD LOGIC LEVEL FAST SWITCHING FIELD EFFECT TRANSISTOR WITH ULTRA
|
|
LOW ON RESISTANCE 0E165
|
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|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
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|
|
| Unit | Each |
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|
FET N-C SMD SOT-23 35V 0A05
|
|
SMD N-CHANNEL FIELD EFFECT TRANSISTOR 35V 50MA
|
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1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
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|
|
FET N-C SOT-23 25V 0A01
|
|
JFET N-CHANNEL FIELD EFFECT TRANSISTOR, SOT-23 PACKAGE AUDIO
|
|
AMPLIFIER
|
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|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
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|
|
| Unit | Each |
|
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|
|
FET P-C SO-8 30V 8A8 0E02
|
|
SMD P-CHANNEL POWERTRENCH MOSFET - LOW ON RESISTANCE 0E02
|
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|
|
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|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
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|
FET P-C TO220 100V 14A 0E20
|
|
P-CHANNEL HEXFET FIELD EFFECT TRANSISTOR VDSS=100V, ID=14A, RDS=0E2, APPLICATION:
|
|
AUDIO POWER AMPLIFIER
|
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1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
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|
|
FET P-C SSOT6 30V 4A 0E050
|
|
SMD SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET
|
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|
|
1
to
200
|
|
201
to
1000
|
|
1001
to
5000
|
|
|
|
|
|
|
| Unit | Each |
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|
|
IR2127SPBF
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
DRIVER FET/IGBT SO08 IR2127S
|
|
SURFACE MOUNT CURRENT SENSING MOSFET/IGBT DRIVER, 200mA
|
|
|
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|
|
| Unit | Each |
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FET P-C SOT-23 30V 0A76 0E60
|
|
30V SMD FAST SWITCHING P-CHANNEL FIELD EFFECT TRANSISTOR, Rds ON= 0.60E, WITH LOGIC
|
|
GATE DRIVE
|
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|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
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|
|
| Unit | Each |
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|
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|
|
DRIVER FET SMD SO08
|
|
SMD HALF-BRIDGE MOSFET DRIVER
|
|
|
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|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
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|
FET P-C SOT-23 12V 4A3 0E05
|
|
P-CHANNEL FET, SMD, 12V, 4.3A, 0E05, SOT23 PACKAGE
|
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1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
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|
|
| Unit | Each |
|
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|
|
FET N-C D-PAK/TO252 30V 30A 0E014
|
|
SURFACE MOUNT N CHANNEL FET, 30V, 30A, ZENER PROTECTED GATE VDS=25V, ID=35A,
|
|
RDS=0E014, IP=145, PT=39W
|
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|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET P-C SO-8 20V 4A5 0E05
|
|
P-CHANNEL 2.5V POWERTRENCH MOSFET 20V
|
|
4.5A
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
|
|
FET N-C SO-8 60V 3A3 0E1
|
|
SMD FAST SWITCHING DUAL N-CHANNEL MOSFET - LOW ON RESISTANCE 0E1
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET P-C SOT-23 20V 0A6
|
|
SMD LOGIC LEVEL HEXFET MOSFET P-CHANNEL 20V 0A6, Rds ON= 0.60E,
|
|
|
|
|
|
|
|
1
to
100
|
|
101
to
500
|
|
501
to
1000
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SOT223 100V 1A5 0E54
|
|
SMD HEXFET POWER MOSFET WITH LOGIC LEVEL GATE DRIVE AND CLAMPING DIODE 100V 1A5 LOW
|
|
RDS 0E54
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
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|
|
IRLML2502TR *DBK*
|
|
IR
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C SOT-23 20V 4A 0E045
|
|
N-CHANNEL HEXFET POWER FIELD EFFECT TRANSISTOR, SMD, WITH LOGIC LEVEL GATE DRIVE
|
|
VDSS=20V, ID=4A, RDS=0E045, MRK=G,
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SMD D2PAK 60V 48A 0E023
|
|
FIELD EFFECT TRANSISTOR, SMD,
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRLML2803TRPBF *DBK*
|
|
IR
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C SOT-23 30V 1A2 0E25
|
|
SMD N-CHANNEL HEXFET POWER FIELD EFFECT TRANSISTOR 30V 1.2A 0E25, WITH LOGIC GATE
|
|
DRIVE
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRLML6402 *DBK*
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
MOSFET P-C SOT-23 20V 3A7 0E06
|
|
HEXFET / MOSFET P-CHANNEL FIELD EFFECT TRANSISTOR 20V 3A7 0E065
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SMD DPAK 500V 2.4A 3E
|
|
SURFACE MOUNT TRANSISTOR N-CHANNEL MOSFET, 2.4 A, 500 V, 3-PIN DPAK
|
|
|
|
|
|
|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C SOT-23 60V 2A7 0E09
|
|
SURFACE MOUNT HEXFET POWER MOSFET WITH LOGIC LEVEL GATE VDS=60V, ID=2.7A,
|
|
RDS=0E092
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 400V 10A 0E55
|
|
HEXFET MOSFET N-CHANNEL Vdss=400V, Rds=0E55,
|
|
Id=10A
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFI9Z34GPBF
|
|
VISHAY SILICONIX
|
|
1.00
|
|
|
|
|
|
|
|
FET P-C TO220 60V 12A 0E14
|
|
FIELD EFFECT TRANSISTOR, P CHANNEL, TO220 PACKAGE ISOLATED, VDSS=60V, ID=12A,
|
|
RDS=0E14,
|
|
|
|
|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO247 800V 5A4 2E0
|
|
N CHANNEL MOSFET FIELD EFFECT TRANSISTOR / TO247 VDS=800V, ID=5.4A,
|
|
RDS=2E
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFR9024N
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
FET P-C D-PAK 55V 11A 0E290
|
|
FIELD EFFECT MOSFET TRANSISTOR, DPAK, 55V, 11A
|
|
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET P-C SOT-23 60V 0A18
|
|
SMD P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF3710 PBF
|
|
INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TO220 100V 57A 0E023
|
|
N CHANNEL FIELD EFFECT TRANSISTOR VDSS=100V, ID=57A, RDS=0E023,
|
|
IP=230A
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF9610PBF
|
|
SILICONIX
|
|
1.00
|
|
|
|
|
|
|
|
FET P-C TO220 200V 1A
|
|
FIELD EFFECT TRANSISTOR, P CHANNEL, TO220 PACKAGE, VDSS=200V, ID=1A, RDS=3E0,
|
|
|
|
|
|
|
|
1
to
10
|
|
11
to
20
|
|
21
to
40
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 100V 80A 0E015
|
|
HEXFET / Power MOSFET,
|
|
Ip=320A
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 500V 2A5 2E1
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET VDS=500V, ID=2.5A,
|
|
RDS=2E1
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 800V 8A FQPF8N80
|
|
N-CHANNEL ENHANCEMENT MODE MOSFET 800V 8A
|
|
1E55
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C D2PAK 60V 48A 0E023
|
|
SURFACE MOUNT N CHANNEL HEXFET POWER MOSFET, 60V, 48A, 0E023
|
|
|
|
|
|
|
|
800
to
800
|
|
1600
to
2400
|
|
3200
to
4000
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET P-C SOT223 60V 1A8 0E50
|
|
P CHANNEL FIELD EFFECT TRANSISTOR / 60V / 1.8A / 0E50
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFP064NPBF
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TO247 55V 110A 0E008
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR 55V 110A 0E008
|
|
|
|
|
|
|
|
1
to
24
|
|
25
to
75
|
|
76
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 200V 9A 0E40
|
|
N CHANNEL HEXFET / POWER MOSFET FIELD EFFECT TRANSISTOR, GDS, RDS=0.40
|
|
OHMS,
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRF3205PBF
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TO220 55V 110A
|
|
N-CHANNEL FIELD EFFECT MOSFET TRANSISTOR VDS=55V, ID=110A, RDS=0E008
|
|
IP=390A
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TOP3 60V 70A 0E012
|
|
N CHANNEL FIELD EFFECT TRANSISTOR, 55V, 81A, 0E012 OHMS
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
IRFP4229PBF
|
|
IR / INFINEON
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TOP3 250V 87A 0E038
|
|
THROUGH HOLE / PCB MOUNT N-CHANNEL FIELD EFFECT TRANSISTOR, GDS, 250V 87A OE038
|
|
AVALANCHE RATED
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
FQP30N06 / 180927
|
|
ON-SEMI / FAIRCHILD
|
|
1.00
|
|
|
|
|
|
|
|
FET N-C TO220 60V 30A 0E04
|
|
N CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, GDS, 60V 30A 0E040
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
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|
|
|
| Unit | Each |
|
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|
|
FET N-C TO220AB 60V 55A
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|
N CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, TO-220AB, 55A, 60V
|
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|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 75V 82A 0E013
|
|
N-CHANNEL HEXFET FAST SWITCHING FIELD EFFECT TRANSISTOR / MOSFET VDSS=75V RDS=0E013
|
|
ID=82A, IP=280A. TO-220
|
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|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 55V 30A 0E022
|
|
N-CHANNEL FIELD EFFECT TRANSISTOR / MOSFET, WITH LOGIC GATE DRIVE 55V 30A
|
|
RDS=22mOHMS,
|
|
|
|
|
|
1
to
25
|
|
26
to
50
|
|
51
to
100
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
FET N-C TO220 500V 2A
|
|
N-CHANNEL HEXFET FIELD EFFECT TRANSISTOR, 500V 2A
|
|
|
|
|
|
|
|
1
to
50
|
|
51
to
100
|
|
101
to
500
|
|
|
|
|
|
|
| Unit | Each |
|
|
|
|
|
|
|
|
|
DRIVER FET/IGBT SO16W IR2113S
|
|
HIGH AND LOW SIDE FET / IGBT DRIVER
|
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|
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|